NEET Physics Semiconductor Electronics Materialsdevices Simple Circuits Class 12 Questions

In figure given below, assuming the diodes to be ideal

If each diode in figure has a forward bias resistance of 25 Ω and infinite resistance in reverse bias, what will be the values of the currents I₃ and I₄?

In the case of forward biasing of p-n junction, which one of the following figures correctly depict the direction of flow of carriers?

From the graph between current (I) and voltage (V) is shown. Identify the portion corresponding to negative resistance

In the circuit shown below, the voltage appearing across the diode D will be of the form:

Two statements are given below: A. When the forward bias voltage across a p-n junction diode increases above a certain threshold voltage, the diode current increases significantly. B. This current is called reverse saturation current. Choose the correct answer from the options given below:

The output (Y) of the given logic implementation is similar to the output of an/a _______ gate.

A full wave rectifier circuit with diodes (D₁) and (D₂) is shown in the figure. If input supply voltage Vₙ = 220sin(100πt) volt, then at t = 15 msec

Consider the following statements A and B and identify the correct answer: A. For a solar-cell, the I⁻V characteristics lies in the IV quadrant of the given graph. B. In a reverse biased pn junction diode, the current measured in (μA), is due to majority charge carriers.

The output (Y) of the given logic gate is similar to the output of an/a:

A logic circuit provides the output \( Y \) as per the following truth table: \[ \begin{array}{|c|c|c|} \hline A & B & Y \\ \hline 0 & 0 & 1 \\ 0 & 1 & 0 \\ 1 & 0 & 1 \\ 1 & 1 & 0 \\ \hline \end{array} \] The expression for the output \( Y \) is :

Given below are two statements: Statement I : Photovoltaic devices can convert optical radiation into electricity. Statement II : Zener diode is designed to operate under reverse bias in breakdown region. In the light of the above statements, choose the most appropriate answer from the options given below :

A full wave rectifier circuit consists of two p-n junction diodes, a centre-tapped transformer, capacitor and a load resistance. Which of these components remove the ac ripple from the rectified output?

For the following logic circuit, the truth table is:

In half wave rectification, if the input frequency is 60 Hz, then the output frequency would be:

In the given circuits (a), (b) and (c), the potential drop across the two p-n junctions are equal in:

The truth table for the given logic circuit is:

Consider the following statements (A) and (B) and identify the correct answer. (A) A zener diode is connected in reverse bias, when used as a voltage regulator. (B) The potential barrier of p-n junction lies between 0.1 V to 0.3 V.

The electron concentration in an n-type semiconductor is the same as hole concentration in a p-type semiconductor. An external field (electric) is applied across each of them. Compare the currents in them.

For the given circuit, the input digital signals are applied at the terminals A, B and C. What would be the output at the terminal y?

For transistor action, which of the following statements is correct?

For the logic circuit shown, the truth table is:

The increase in the width of the depletion region in a p-n junction diode is due to:

For a p-type semiconductor, which of the following statements is true?

The correct Boolean operation represented by the circuit diagram drawn is:

In a p-n junction diode, change in temperature due to heating

In the circuit shown in the figure, the input voltage Vᵢ is 20 V, V_BE = 0 and V_CE = 0. The values of I_B, I_C and β are given by

In the combination of the following gates the output Y can be written in terms of inputs A and B as

The given electrical network is equivalent to

Which one of the following represents forward bias diode?

To get an output 1 for the following circuit, the correct choice for the input is

Consider the junction diode as ideal. The value of current flowing through AB is

Which logic gate is represented by the following combination of logic gates?

If in a p-n junction, a square input signal of 10 V is applied, as shown, then the output across Rₗ will be

The barrier potential of a p-n junction depends on: a. Type of semiconductor material b. Amount of doping c. Temperature Which one of the following is correct?

The given graph represents V – I characteristic for a semiconductor device. Which of the following statements is correct?

The output from a NAND gate is divided into two in parallel and fed to another NAND gate. The resulting gate is a:

One way in which the operation of a n-p-n transistor differs from that a p-n-p is:

In an unbiased p-n junction, holes diffuse from the p-regions to n-region because of: