Physics-(general)
NEET Physics (general) MCQ Question
Type: MCQ-numerical-Medium-Class 12
In a n-type semiconductor doped with a pentavalent impurity, if the electron concentration is 10^19 cm^-3, what would be the approximate hole concentration at room temperature assuming the intrinsic carrier concentration of silicon is 1.5 x 10^10 cm^-3?
A
2.25 x 10^1 cm^-3
B
1.5 x 10^10 cm^-3
C
1.5 x 10^10 cm^-2
D
3.75 x 10^8 cm^-3
Correct Answer
Option A
Detailed Explanation
Using the mass action law for semiconductors, n_e * n_h = (n_i)^2. Given n_e = 10^19 cm^-3 and n_i = 1.5 x 10^10 cm^-3, we find n_h = (1.5 x 10^10)^2 / 10^19 = 2.25 x 10^1 cm^-3.
Found an issue with this question?