NEET Physics (general) MCQ Question
Which of the following combinations about the energy band gap and charge carriers in semiconductors is correct?
(E_g) Si < (E_g) Ge < (E_g) C and holes diffuse from the p-region to the n-region because of higher concentration in the p-region.
(E_g) C > (E_g) Si > (E_g) Ge and free electrons in the n-region attract holes from the p-region.
(E_g) Ge < (E_g) Si < (E_g) C and forward bias raises the potential barrier in a p-n junction.
(E_g) C = (E_g) Si = (E_g) Ge and majority carrier current is reduced to zero under forward bias.
Correct Answer
Detailed Explanation
The energy band gap relationships are correctly stated in option A, and it is accurate that holes diffuse from the p-region to the n-region due to higher concentration in the p-region, as supported by the NCERT context.
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