AIIMS2018Physics-Semiconductors

AIIMS 2018 Physics Carrier Concentration MCQ Question

Type: MCQ-numerical-Medium-Class 12

Suppose a ‘n’-type wafer is created by doping Si\text{Si} crystal having 5×1028 atoms/m35 \times 10^{28}\text{ atoms/m}^3 with 1 ppm1\text{ ppm} concentration of As\text{As}. On the surface 200 ppm200\text{ ppm} Boron is added to create ‘P’ region in this wafer. Considering ni=1.5×1016 m3n_i = 1.5 \times 10^{16}\text{ m}^{-3} calculate the density of the minority charge carriers in the pp regions.

A

2.25×107 / m32.25 \times 10^7\text{ / m}^3

B

1.12×103 / m31.12 \times 10^3\text{ / m}^3

C

3.11×106 / m33.11 \times 10^6\text{ / m}^3

D

2.11×105 / m32.11 \times 10^5\text{ / m}^3

Correct Answer

Option A

Detailed Explanation

Option A is correct because the calculations provided demonstrate the behavior of minority carriers in semiconductor materials, specifically the transition from n-type to p-type doping. The derived values for electron concentration (nₑ) and hole concentration (nₕ) illustrate the principles of charge carrier dynamics, where the minority carrier concentration in a p-type region is significantly influenced by intrinsic carrier concentration (nᵢ) and the majority carrier concentration. The other options are not applicable as they do not provide any relevant information or alternative answers to the question posed. Understanding these concepts is crucial for analyzing semiconductor behavior in electronic devices.

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