A semiconductor having electron and hole mobilities $\mu_n$ and $\mu_p$ respectively. If its intrinsic carrier density is $n_i$, then what will be the value of hole concentration $P$ for which the con

Question

A semiconductor having electron and hole mobilities $\mu_n$ and $\mu_p$ respectively. If its intrinsic carrier density is $n_i$ , then what will be the value of hole concentration $P$ for which the conductivity will be minimum at a given temperature?

A

$n_i \sqrt{\frac{\mu_n}{\mu_p}}$

B

$n_h \sqrt{\frac{\mu_n}{\mu_p}}$

C

$n_i \sqrt{\frac{\mu_p}{\mu_n}}$

D

$n_h \sqrt{\frac{\mu_p}{\mu_n}}$

Accepted Answer

$n_i \sqrt{\frac{\mu_n}{\mu_p}}$

Answer

$n_h \sqrt{\frac{\mu_n}{\mu_p}}$

Answer

$n_i \sqrt{\frac{\mu_p}{\mu_n}}$

Answer

$n_h \sqrt{\frac{\mu_p}{\mu_n}}$

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