AIIMS2019Physics-Semiconductors

AIIMS 2019 Physics Doping MCQ Question

Type: MCQ-conceptual-Medium-Class 12

A pure semiconductor has equal electron and hole concentration of 10¹⁶ m⁻³. Doping by gallium increases nₕ to 5×10²² m⁻³. Then, the value of nₑ in the doped semiconductor is

A

10⁶ /m³

B

10²² /m³

C

2×10⁶ /m³

D

2×10⁹ /m³

Correct Answer

Option D

Detailed Explanation

In a pure semiconductor, the electron concentration nen_e equals the hole concentration nhn_h, which is given as 1016m310^{16} \, \text{m}^{-3}. When gallium is introduced as a p-type dopant, it significantly increases the hole concentration to nh=5×1022m3n_h = 5 \times 10^{22} \, \text{m}^{-3}. Since the semiconductor remains charge neutral, the relationship nenh=ni2n_e \cdot n_h = n_i^2 (where nin_i is the intrinsic carrier concentration) must hold. Given the large increase in nhn_h, the electron concentration nen_e decreases to 2×109m32 \times 10^9 \, \text{m}^{-3} to maintain charge neutrality, making option D correct.

Options A and C are incorrect because they suggest electron concentrations that are too low compared to the required balance for charge neutrality, while option B does not account for the significant increase in hole concentration due to doping.

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